GaN Self-standing Substrate

GaN Self-standing Substrate 氮化镓自支撑衬底是利用公司多年研发的氢化物气相外延技术（HVPE）和化合物半导体加工技术生产出的高品质单晶基板，其特点是结晶质量高、均匀性好、表面质量优越。

GaN self-standing substrate is a high-quality single crystal substrate produced by Goetsu’s own hydride vapor phase epitaxy (HVPE) and compound semiconductor processing technology. It is characterized by high crystal quality, good uniformity and excellent surface quality.

2inch GaN self-standing substrate
Type	Undoped	Silicon doped	Fe-doped
Size	50.8 ± 1 mm	50.8 ± 1 mm	50.8 ± 1 mm
Thickness	350 ± 25 μm 400± 25 μm	400 ± 25 μm 550± 25 μm	400 ± 25 μm 550 ± 25 μm
Resistance value (300K)		< 0.05 Ω·cm	>1.0E8 Ω·cm
TTV	≤ 15 μm（2“）
BOW	≤ 20 μm（2“）
Ga surface roughness	< 0.2 nm (polished)
Valid area	> 90%
Defect density	<9.9x10⁵ cm^-2

GaN Self-standing Substrate

GaN Self-standing Substrate

氮化镓自支撑衬底是利用公司多年研发的氢化物气相外延技术（HVPE）和化合物半导体加工技术生产出的高品质单晶基板，其特点是结晶质量高、均匀性好、表面质量优越。