Goetsu Semiconductor Wuxi Co., Ltd. (referred to as the“Goetsu”) was established in 2019, mainly engaged in the research and development, as well as production and sales of the third-generation semiconductor material Gallium Nitride (GaN) self-standing substrate. It is one of the few manufacturers in the world of GaN self-standing substrate with completely independent intellectual property rights. At present, Goetsu's main products are 2-inch and 4-inch GaN self-standing substrates, which can be widely used in power electronics, radio frequencies, optoelectronics and other fields.
Goetsu's core team consists of global experts with rich experience in mass production of GaN, and a group of high-quality R&D personnel. Goetsu has already mastered the world's unique seed crystal growth technology, HVPE equipment design and manufacture technology, and high efficiency GaN crystal processing technology. In the future, Goetsu will continue to develop and produce larger-sized GaN self-standing substrates, aiming to become a world-class supplier of GaN materials.