GaN Thick Film

GaN Thick Film 我司可根据客户需求，使用HVPE技术，在蓝宝石、氮化硅等衬底材料上，定制生产厚度为40微米左右的氮化镓厚膜片。

Goetsu can provide GaN thick films with different thicknesses (e.g. 40 microns) on various substrate materials such as sapphire and SiC, utilizing HVPE according to customer demand.

2inch\| 4inch ＧaN thick film (Substrate materials include sapphire,SiC,etc.)
Type	Undoped	Silicon doped	Fe-doped
Size	50.8 ± 1 mm	50.8 ± 1 mm，100± 1 mm	50.8 ± 1 mm，100± 1 mm
Thickness	40 ± 5 μm	40 ± 5 μm	40 ± 5 μm

GaN Thick Film

GaN Thick Film

我司可根据客户需求，使用HVPE技术，在蓝宝石、氮化硅等衬底材料上，定制生产厚度为40微米左右的氮化镓厚膜片。